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| DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R2 only B SOT-523 A C TOP VIEW BC E G H K M Dim A B C D G H N Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 Mechanical Data * * * * * * * * Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.002 grams (approx.) Ordering Information (See Page 2) P/N DDTC114GE DDTC124GE DDTC144GE DDTC115GE R2 (NOM) 10KW 22KW 47KW 100KW MARKING N26 N27 N28 N29 J K L M N a J D L C B All Dimensions in mm R2 E SCHEMATIC DIAGRAM Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd RqJA Tj, TSTG Value 50 50 5 100 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30316 Rev. 3 - 1 1 of 3 DDTC (R2-ONLY SERIES) E Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO Min 50 50 5 3/4 300 140 65 30 3/4 30 56 68 82 -30 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 250 Max 3/4 3/4 3/4 0.5 580 260 130 58 0.3 3/4 +30 3/4 Unit V V V mA mA V 3/4 % MHz IC = 50mA IC = 1mA IE = 720mA, DDTC114GE IE = 330mA, DDTC124GE IE = 160mA, DDTC144GE IE = 72mA, DDTC115GE VCB = 50V VEB = 4V IC = 10mA, IB = 0.5mA IC = 5mA, VCE = 5V 3/4 VCE = 10V, IE = -5mA, f = 100MHz Test Condition NEW PRODUCT Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DDTC114GE DDTC124GE DDTC144GE DDTC115GE DDTC114GE DDTC124GE DDTC144GE DDTC115GE IEBO VCE(sat) hFE DR2 fT Collector-Emitter Saturation Voltage DC Current Transfer Ratio Bleeder Resistor (R2) Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only Ordering Information Device DDTC114GE-7 DDTC124GE-7 DDTC144GE-7 DDTC115GE-7 Notes: (Note 2) Packaging SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXYM XXX = Product Type Marking Code (See Page 1, e.g. N26 = DDTC114GE) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30316 Rev. 3 - 1 2 of 3 DDTC (R2-ONLY SERIES) E TYPICAL CURVES - DDTC114GE NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 PD, POWER DISSIPATION (MILLIWATTS) 1 IC/IB = 10 200 0.1 150 75C -25C 25C 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Derating Curve 1000 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 5 4 IE = 0mA 75C COB, CAPACITANCE (pF) 3 2 1 0 100 25C -25C 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC CURRENT GAIN 75C 0 100 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 VO = 0.2 1000 IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 0.001 -25C Vin, INPUT VOLTAGE (V) 75C -25C 25C 1 25C 0 1 2 3 4 5 6 7 8 9 10 0.1 0 100 200 300 400 500 600 700 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30316 Rev. 3 - 1 3 of 3 DDTC (R2-ONLY SERIES) E |
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